Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate
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Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors | npj 2D Materials and Applications
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Crystals | Free Full-Text | An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED
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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports
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InGaN/GaN/AlGaN-Based Leds and Laser Diodes | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
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Materials | Free Full-Text | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
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Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon | Scientific Reports
Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes
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1: Wurtzite crystal structure of GaN in (a) and representation of some... | Download Scientific Diagram
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Strain and built-in potentials in wurtzite polar and non-polar InGaN/GaN quantum wires | SpringerLink
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Bandgaps of wurtzite GaN, AlN and InN and their alloys versus their... | Download Scientific Diagram
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Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport | ACS Photonics
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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports
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Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports
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